| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | |||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | |||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
P-TO220-3-1 |
59888 |
原装现货库存.价格优势 |
|||
TI |
25+ |
DSBGA-24 |
5044 |
||||
Infineon(英飞凌) |
25+ |
标准封装 |
8800 |
公司只做原装,详情请咨询 |
|||
Infineon(英飞凌) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
INFINEON/英飞凌 |
2540+ |
TO-220 |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon |
26+ |
TO-220 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
VBsemi |
24+ |
TO-220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
25+ |
TO220-3 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
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DdatasheetPDF页码索引
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