型号 功能描述 生产厂家 企业 LOGO 操作

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

NEC

瑞萨

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature

SIEMENS

西门子

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature

SIEMENS

西门子

更新时间:2026-3-14 15:10:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
22+
P-TO220-3-1
59888
原装现货库存.价格优势
TI
25+
DSBGA-24
5044
Infineon(英飞凌)
25+
标准封装
8800
公司只做原装,详情请咨询
Infineon(英飞凌)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
INFINEON/英飞凌
2540+
TO-220
8595
只做原装正品假一赔十为客户做到零风险!!
Infineon
26+
TO-220
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
Infineon(英飞凌)
24+
N/A
9855
原装正品现货支持实单
VBsemi
24+
TO-220
18000
原装正品 有挂有货 假一赔十
Infineon Technologies
22+
TO2203
9000
原厂渠道,现货配单
INFINEON
25+
TO220-3
1675
就找我吧!--邀您体验愉快问购元件!

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