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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB80N03 | SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 |   | |
SPB80N03 | SIPMOS Power Transistor | INFINEON 英飞凌 | | |
Enhancement mode Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | | ||
OptiMOS® Power-Transistor Feature\n• N-Channel\n• Enhancement mode\n• Excellent Gate Charge x RDS(on) product (FOM)\n• Superior thermal resistance\n• 175°C operating temperature\n• Avalanche rated\n• dv/dt rated | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor Feature • N-Channel • Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | INFINEON 英飞凌 | | ||
OptiMOS Power-Transistor OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated | INFINEON 英飞凌 | | ||
MOSFET N-CH 30V 80A D2PAK | INFINEON 英飞凌 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | |
SPB80N03产品属性
- 类型
描述
- 型号
SPB80N03
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
SIPMOS Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
TO263-3-2 |
22+ |
10000 |
终端免费提供样品 可开13%增值税发票 |
|||
INFINEON/英飞凌 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
TO-263 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
13+ |
TO-263 |
250 |
||||
INFINEON |
25+ |
SOT263 |
20000 |
原装 |
|||
Infineon Technologies |
21+ |
PG-TO263-3-2 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
INFINEON |
18+ |
SOT263 |
85600 |
保证进口原装可开17%增值税发票 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
880000 |
明嘉莱只做原装正品现货 |
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SPB80N03规格书下载地址
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SPB80N03数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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