SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature

SIPMOS Power Transistor

Enhancement mode

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature

OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated

OptiMOS Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated

OptiMOS Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated

OptiMOS Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated

OptiMOS Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated

MOSFET N-CH 30V 80A D2PAK

MOSFET N-CH 30V 80A D2PAK

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM80N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

N-Channel 30-V (D-S) MOSFET

文件：1.00146 Mbytes Page：7 Pages

Fast Switching Characteristic

文件：82.72 Kbytes Page：7 Pages

Fast Switching Characteristic

文件：82.72 Kbytes Page：7 Pages