isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

N-Channel 30-V (D-S) MOSFET

文件：1.01523 Mbytes Page：8 Pages

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes Page：8 Pages

功率 MOSFET，25V，45A，16.5mΩ，单 N 沟道，IPAK

Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes Page：8 Pages

Power MOSFET 45 Amps, 25 Volts

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.98 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01524 Mbytes Page：8 Pages

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes Page：8 Pages

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01523 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01575 Mbytes Page：8 Pages

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes Page：8 Pages

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su