NTD40N03R价格

参考价格:¥0.9750

型号:NTD40N03RT4 品牌:ON 备注:这里有NTD40N03R多少钱,2025年最近7天走势,今日出价,今日竞价,NTD40N03R批发/采购报价,NTD40N03R行情走势销售排行榜,NTD40N03R报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NTD40N03R

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NTD40N03R

Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

ONSEMI

安森美半导体

NTD40N03R

N-Channel 30-V (D-S) MOSFET

文件:1.01523 Mbytes Page:8 Pages

VBSEMI

微碧半导体

NTD40N03R

Power MOSFET 45 Amps, 25 Volts

文件:65.76 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NTD40N03R

功率 MOSFET,25V,45A,16.5mΩ,单 N 沟道,IPAK

ONSEMI

安森美半导体

Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

ONSEMI

安森美半导体

Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

ONSEMI

安森美半导体

Power MOSFET 45 Amps, 25 Volts

文件:65.76 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 45 Amps, 25 Volts

ONSEMI

安森美半导体

Power MOSFET 45 Amps, 25 Volts

文件:65.76 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:959.98 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01524 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET 45 Amps, 25 Volts

文件:65.76 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 45 Amps, 25 Volts

文件:65.76 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01523 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01575 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET 45 Amps, 25 Volts

文件:65.76 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

ETCList of Unclassifed Manufacturers

未分类制造商

Low Gate Charge Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applica

A-POWER

富鼎先进电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:959.97 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Fast Switching Characteristic

文件:56.65 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

NTD40N03R产品属性

  • 类型

    描述

  • 型号

    NTD40N03R

  • 功能描述

    MOSFET 25V 45A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-20 14:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
25+23+
SOT-252
25545
绝对原装正品全新进口深圳现货
ON/安森美
24+
TO-252
39197
郑重承诺只做原装进口现货
ONSemi
24+
TO252
8000
新到现货,只做全新原装正品
ON
2023+
TO-252
50000
原装现货
ONS
24+
TO-252
90000
一级代理商进口原装现货、价格合理
ON/安森美
25+
TO-252
50000
全新原装正品支持含税
原装
1923+
TO-252
8900
公司原装现货特价长期供货欢迎来电咨询
ONSEMI/安森美
05+
TO252
93
原装现货
ON/安森美
22+
TO-252
12245
现货,原厂原装假一罚十!
ON
24+
NA
3000
进口原装 假一罚十 现货

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