位置：首页 > IC中文资料第2050页 > NTD40N03RG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTD40N03RG | Power MOSFET 45 Amps, 25 Volts 文件：65.76 Kbytes Page：8 Pages | ONSEMI 安森美半导体 |   | |
NTD40N03RG | N-Channel 30-V (D-S) MOSFET 文件：1.01524 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
Power MOSFET 45 Amps, 25 Volts 文件：65.76 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package. | SAMHOP 三合微科 | | ||
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package. | SAMHOP 三合微科 | | ||
N CHANNEL ENHANCEMENT MODE POWER MOSFET Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su | ETCList of Unclassifed Manufacturers 未分类制造商 | |
NTD40N03RG产品属性
- 类型
描述
- 型号
NTD40N03RG
- 功能描述
MOSFET 25V 45A N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
DPAK4LEADSingleG |
8866 |
||||
ON |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
|||
ON |
1923+ |
SOT-252 |
35689 |
绝对进口原装现货库存特价销售 |
|||
ON |
25+ |
TO-252 |
5600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON |
05+ |
SOT252 |
2066 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
ON/安森美 |
17+ |
DPAK4LEADSINGLEGAUGE |
31518 |
原装正品 可含税交易 |
|||
ON/安森美 |
23+ |
TO-252 |
38900 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
23+ |
SOT252 |
2066 |
正规渠道,只有原装! |
|||
onsemi |
25+ |
DPAK |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
NTD40N03RG规格书下载地址
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DdatasheetPDF页码索引
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