NTD3055L价格

参考价格:¥1.1844

型号:NTD3055L104-1G 品牌:ON 备注:这里有NTD3055L多少钱,2026年最近7天走势,今日出价,今日竞价,NTD3055L批发/采购报价,NTD3055L行情走势销售排行榜,NTD3055L报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 50A RDS(ON)

BYCHIP

百域芯

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

丝印代码:55L104;60V N -Channel MOSFET

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

BYCHIP

百域芯

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 170mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

BYCHIP

百域芯

单 N 沟道逻辑电平功率 MOSFET 60V,12A,104mΩ

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:126.6 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:126.6 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.1 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件:962.41 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.004 Mbytes Page:8 Pages

VBSEMI

微碧半导体

12 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:126.6 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.004 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件:674.92 Kbytes Page:5 Pages

DOINGTER

杜因特

丝印代码:DPAK;isc N-Channel MOSFET Transistor

文件:310.35 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:125.02 Kbytes Page:9 Pages

ONSEMI

安森美半导体

9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK

文件:93.68 Kbytes Page:8 Pages

ONSEMI

安森美半导体

单 N 沟道,逻辑电平,功率 MOSFET,60V,9A,170mΩ

ONSEMI

安森美半导体

Power MOSFET

文件:133.3 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:133.3 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:125.02 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.1 Kbytes Page:7 Pages

VBSEMI

微碧半导体

9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK

文件:93.68 Kbytes Page:8 Pages

ONSEMI

安森美半导体

9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK

文件:93.68 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.11 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:125.02 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:125.02 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:133.3 Kbytes Page:8 Pages

ONSEMI

安森美半导体

9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK

文件:93.68 Kbytes Page:8 Pages

ONSEMI

安森美半导体

9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK

文件:93.68 Kbytes Page:8 Pages

ONSEMI

安森美半导体

9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK

文件:93.68 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00401 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:133.3 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:125.02 Kbytes Page:9 Pages

ONSEMI

安森美半导体

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as

ALLEGRO

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

ETCList of Unclassifed Manufacturers

未分类制造商

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

ALPHAWIRE

N-Channel 30-V (D-S) MOSFET

文件:959.93 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Customer Specification

文件:70.18 Kbytes Page:3 Pages

ALPHAWIRE

NTD3055L产品属性

  • 类型

    描述

  • 型号

    NTD3055L

  • 功能描述

    MOSFET 60V 12A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-13 9:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
TO-252
6000
ON(安森美)
25+
TO-252-2(DPAK)
22412
原装正品现货,原厂订货,可支持含税原型号开票。
ON(安森美)
23+
25900
新到现货,只有原装
ON
25+
TO-252
6000
全新原装现货、诚信经营!
ONSEMI/安森美
25+
TO-252
20300
ONSEMI/安森美原装特价NTD3055L104G即刻询购立享优惠#长期有货
ON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
ON(安森美)
24+
TO-252-2(DPAK)
8834
只做原装现货假一罚十!价格最低!只卖原装现货
ON
21+
TO-252
15000
全新原装鄙视假货
ON
15+
原厂原装
70000
进口原装现货假一赔十
ONSEMI/安森美
24+
TO-252
49300
只做全新原装进口现货

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