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NTD3055L价格

参考价格：￥1.1844

型号：NTD3055L104-1G 品牌：ON 备注：这里有NTD3055L多少钱，2026年最近7天走势，今日出价，今日竞价，NTD3055L批发/采购报价，NTD3055L行情走势销售排行榜，NTD3055L报价。

型号	功能描述	生产厂家企业	LOGO
NTD3055L104	Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica	ONSEMI 安森美半导体	ONSEMI
NTD3055L104	12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NTD3055L104	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NTD3055L104	单 N 沟道逻辑电平功率 MOSFET 60V，12A，104mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Lower RDS(on)\n• Lower VDS(on)\n• Tighter VSD Specification\n• Lower Diode Reverse Recovery Time\n• Lower Reverse Recovery Stored Charge\n• RoHS Compliant;	ONSEMI 安森美半导体	ONSEMI
NTD3055L104-1	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NTD3055L104-1	Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica	ONSEMI 安森美半导体	ONSEMI
NTD3055L104-1G	Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica	ONSEMI 安森美半导体	ONSEMI
NTD3055L104-1G	12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NTD3055L104G	12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NTD3055L104G	Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica	ONSEMI 安森美半导体	ONSEMI
NTD3055L104G	N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON)	BYCHIP 百域芯	BYCHIP
NTD3055L104T4	Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica	ONSEMI 安森美半导体	ONSEMI
NTD3055L104T4G	Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica	ONSEMI 安森美半导体	ONSEMI
NTD3055L104T4G	丝印代码：55L104；60V N -Channel MOSFET Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge	UMW 友台半导体	UMW
NTD3055L104T4G	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 50A RDS(ON)	BYCHIP 百域芯	BYCHIP
NTD3055L104T4G	12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
NTD3055L170	单 N 沟道，逻辑电平，功率 MOSFET，60V，9A，170mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.	ONSEMI 安森美半导体	ONSEMI
NTD3055L170-1	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 170mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NTD3055L170T4G	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 50A RDS(ON)	BYCHIP 百域芯	BYCHIP
NTD3055L104	Power MOSFET 文件：97.81 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L104	12 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：126.6 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L104_16	Power MOSFET 文件：97.81 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L104-001	12 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：126.6 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L104-001	N-Channel 60 V (D-S) MOSFET 文件：960.1 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
NTD3055L104-1G	N-Channel 60 V (D-S) MOSFET 文件：962.41 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
NTD3055L104-1G	Power MOSFET 文件：97.81 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L104G	12 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：126.6 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L104G	Power MOSFET 文件：97.81 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L104G	N-Channel 60 V (D-S) MOSFET 文件：1.004 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
NTD3055L104T4G	N-Channel 60 V (D-S) MOSFET 文件：1.004 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
NTD3055L104T4G	N-Channel MOSFET uses advanced trench technology 文件：674.92 Kbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
NTD3055L104T4G	Power MOSFET 文件：97.81 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170	丝印代码：DPAK；isc N-Channel MOSFET Transistor 文件：310.35 Kbytes Page：2 Pages	ISC 无锡固电	ISC
NTD3055L170	Power MOSFET 文件：125.02 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170	9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK 文件：93.68 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170.1G	Power MOSFET 文件：133.3 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170_12	Power MOSFET 文件：133.3 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170_14	Power MOSFET 文件：125.02 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170-001	N-Channel 60 V (D-S) MOSFET 文件：960.1 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
NTD3055L170-1	9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK 文件：93.68 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170-1G	9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK 文件：93.68 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170-1G	Power MOSFET 文件：125.02 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170-1G	N-Channel 60 V (D-S) MOSFET 文件：960.11 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
NTD3055L170G	Power MOSFET 文件：125.02 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170G	Power MOSFET 文件：133.3 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170G	9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK 文件：93.68 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170T4	9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK 文件：93.68 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170T4G	9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK 文件：93.68 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170T4G	Power MOSFET 文件：125.02 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170T4G	Power MOSFET 文件：133.3 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTD3055L170T4G	N-Channel 60 V (D-S) MOSFET 文件：1.00401 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
MJE3055T	POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARY SILICON POWER TRANSISTORS.	MOSPEC 统懋	MOSPEC
MMFT3055E	MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time	MOTOROLA 摩托罗拉	MOTOROLA
MTP3055V	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t	MOTOROLA 摩托罗拉	MOTOROLA
TIP3055	POWER TRANSISTORS COMPLEMENTARY SILICON TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @	MOTOROLA 摩托罗拉	MOTOROLA
TIP3055	POWER TRANSISTORS(15A,60V,90W) 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955	MOSPEC 统懋	MOSPEC

NTD3055L产品属性

类型
描述
Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
N-Channel
Configuration：
Single
V(BR)DSS Min (V)：
60
VGS Max (V)：
15
VGS(th) Max (V)：
2
ID Max (A)：
12
PD Max (W)：
48
RDS(on) Max @ VGS = 4.5 V(mΩ)：
104
Qg Typ @ VGS = 10 V (nC)：
7.4
Ciss Typ (pF)：
316
Package Type：
DPAK INSERTION MOUNT

NTD3055L供应商更多...

更新时间：2026-5-18 15:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宏世佳电子科技有限公司	NTD3055L104-1G	ON	2025+	TO-251-3	3577	全新原厂原装产品、公司现货销售	询价
深圳市富利微电子科技有限公司	NTD3055L104-1G	ON/安森美	25+	TO-251(I-PAK)	30000	原装正品公司现货,假一赔十!	询价
深圳市一线半导体有限公司	NTD3055L104-1G	ON	24+	DPAK3(SINGLEGAUGE	8866		询价
深圳市华来深电子有限公司	NTD3055L104-1G	ON	23+	TO-251	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市科恒伟业电子有限公司	NTD3055L104-1G	ON/安森美	2450+	SOT251	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市粤骏腾电子科技有限公司	NTD3055L104-1G	ON/安森美	24+	TO-251(I-PAK)	10000	十年沉淀唯有原装	询价
深圳市河锋鑫科技有限公司	NTD3055L104-1G	ON/安森美	2021+	TO-251(I-PAK)	7600	原装现货，欢迎询价	询价
深圳市恒凯威科技开发有限公司	NTD3055L104-1G	ON/安森美	21+	TO-251(I-PAK)	8080	只做原装,质量保证	询价
深圳市中飞凌科技有限公司	NTD3055L104-1G	ON(安森美)	26+	NA	60000	只有原装可配单	询价
深圳市腾亿芯科技有限公司	NTD3055L104-1G	ON/安森美	25+	SMD	20000	原装	询价

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找IC，尽在114IC

NTD3055L价格

NTD3055L产品属性

NTD3055L供应商更多...

NTD3055L芯片相关品牌

NTD3055L规格书下载地址

NTD3055L参数引脚图相关

NTD3055L数据表相关新闻

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