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NTD3055L104价格
参考价格：￥1.1844
型号：NTD3055L104-1G 品牌：ON 备注：这里有NTD3055L104多少钱，2025年最近7天走势，今日出价，今日竞价，NTD3055L104批发/采购报价，NTD3055L104行情走势销售排行榜，NTD3055L104报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTD3055L104 | Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 |   | |
NTD3055L104 | 12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
NTD3055L104 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NTD3055L104 | Power MOSFET 文件：97.81 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
NTD3055L104 | 12 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：126.6 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | | ||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | | ||
12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | | ||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | | ||
12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
60V N -Channel MOSFET Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET 文件：97.81 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
12 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：126.6 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：960.1 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：97.81 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：962.41 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：97.81 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
12 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件：126.6 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.004 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.004 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：674.92 Kbytes Page：5 Pages | DOINGTER 杜因特 | | ||
Power MOSFET 文件：97.81 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
60V N -Channel MOSFET Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |
NTD3055L104产品属性
- 类型
描述
- 型号
NTD3055L104
- 功能描述
MOSFET 60V 12A N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
19+ |
TO-252 |
28459 |
深圳原装进口无铅现货正规报关 |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON(安森美) |
24+ |
TO-252-2(DPAK) |
10048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
|||
ON |
25+ |
TO-252 |
6000 |
全新原装现货、诚信经营! |
|||
ON/安森美 |
24+ |
DPAK |
20000 |
只做原厂渠道 可追溯货源 |
|||
ONSEMI/安森美 |
2410+ |
TO-252 |
80000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
ON/安森美 |
23+ |
SOT-252 |
24190 |
原装正品代理渠道价格优势 |
|||
ON |
23+ |
DPAK-3 |
5000 |
原装正品,假一罚十 |
NTD3055L104规格书下载地址
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