NTD3055价格

参考价格:¥1.2588

型号:NTD3055-094-1G 品牌:ON 备注:这里有NTD3055多少钱,2025年最近7天走势,今日出价,今日竞价,NTD3055批发/采购报价,NTD3055行情走势销售排行榜,NTD3055报价。
型号 功能描述 生产厂家 企业 LOGO 操作

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 94mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 150mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

60V N -Channel MOSFET

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 170mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

N-Channel MOSFET uses advanced trench technology

文件:674.91 Kbytes Page:5 Pages

DOINGTER

杜因特

Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK

文件:135.47 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.09 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK

文件:135.47 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00403 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00406 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK

文件:135.47 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

单 N 沟道,功率 MOSFET,60V,9A,150mΩ

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.09 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00402 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:126.6 Kbytes Page:8 Pages

ONSEMI

安森美半导体

单 N 沟道逻辑电平功率 MOSFET 60V,12A,104mΩ

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.1 Kbytes Page:7 Pages

VBSEMI

微碧半导体

12 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:126.6 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:962.41 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件:1.004 Mbytes Page:8 Pages

VBSEMI

微碧半导体

12 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:126.6 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

NTD3055产品属性

  • 类型

    描述

  • 型号

    NTD3055

  • 功能描述

    MOSFET 60V 12A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-26 19:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMI/安森美
25+
TO-252
20300
ONSEMI/安森美原装特价NTD3055L104G即刻询购立享优惠#长期有货
ON/安森美
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
ON
23+
TO252
20000
正规渠道,只有原装!
ON
21+
TO252
7500
全新原装公司现货
ON(安森美)
24+
TO-252-2(DPAK)
10048
原厂可订货,技术支持,直接渠道。可签保供合同
ON
21+
TO-252
15000
全新原装鄙视假货
ON
25+
TO-252
6000
全新原装现货、诚信经营!
ON
23+
TO-252
6000
ONSEMI/安森美
24+
TO-252
49300
只做全新原装进口现货
ON
24+
DPAK
14950

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