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NTD30价格
参考价格:¥1.2588
型号:NTD3055-094-1G 品牌:ON 备注:这里有NTD30多少钱,2025年最近7天走势,今日出价,今日竞价,NTD30批发/采购报价,NTD30行情走势销售排行榜,NTD30报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NTD30 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS 文件:35 Kbytes Page:2 Pages | edi | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 94mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 150mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | |||
12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | |||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | |||
12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | |||
12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | |||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | |||
Power MOSFET Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica | ONSEMI 安森美半导体 | |||
12 Amps, 60 Volts, Logic Level N−Channel DPAK Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
60V N -Channel MOSFET Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 170mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 24V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | Bychip 百域芯 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Power MOSFET 12 A, 60 V 文件:76.61 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK 文件:135.47 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
N-Channel MOSFET uses advanced trench technology 文件:674.91 Kbytes Page:5 Pages | DOINGTER 杜因特 | |||
Power MOSFET 12 A, 60 V 文件:76.61 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 12 A, 60 V 文件:76.61 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK 文件:135.47 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:960.09 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
Power MOSFET 12 A, 60 V 文件:76.61 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.00403 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
Power MOSFET 12 A, 60 V 文件:76.61 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 12 A, 60 V 文件:76.61 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK 文件:135.47 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.00406 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
Power MOSFET 9.0 A, 60 V 文件:67.44 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:112.93 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:112.93 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 9.0 A, 60 V 文件:67.44 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 9.0 A, 60 V 文件:67.44 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:112.93 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:960.09 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
Power MOSFET 9.0 A, 60 V 文件:67.44 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:112.93 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 9.0 A, 60 V 文件:67.44 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 9.0 A, 60 V 文件:67.44 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:112.93 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.00402 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
Power MOSFET 文件:112.93 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:97.81 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
12 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件:126.6 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:97.81 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
12 Amps, 60 Volts, Logic Level N?묬hannel DPAK 文件:126.6 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:960.1 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:962.41 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
Power MOSFET 文件:97.81 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
Power MOSFET 文件:97.81 Kbytes Page:9 Pages | ONSEMI 安森美半导体 |
NTD30产品属性
- 类型
描述
- 型号
NTD30
- 制造商
EDI
- 制造商全称
Electronic devices inc.
- 功能描述
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
10248 |
全新原装正品/价格优惠/质量保障 |
|||
ON |
24+ |
SOT252 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
20+ |
TO-252 |
368 |
深圳原装无铅现货正规报关 |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON(安森美) |
24+ |
TO-252 |
12048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON |
21+ |
SOT252 |
10000 |
只做原装,质量保证 |
|||
ON |
25+ |
TO-252 |
6000 |
全新原装现货、诚信经营! |
|||
ON/安森美 |
24+ |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ONSEMI/安森美 |
2410+ |
TO-252 |
80000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
ONSemi |
24+ |
TO-252-3 |
13725 |
只做原装 有挂有货 假一赔十 |
NTD30规格书下载地址
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