NTD30价格

参考价格:¥1.2588

型号:NTD3055-094-1G 品牌:ON 备注:这里有NTD30多少钱,2025年最近7天走势,今日出价,今日竞价,NTD30批发/采购报价,NTD30行情走势销售排行榜,NTD30报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NTD30

HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

文件:35 Kbytes Page:2 Pages

edi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 94mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 150mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 104mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specifica

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuit

ETCList of Unclassifed Manufacturers

未分类制造商

60V N -Channel MOSFET

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 170mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 24V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK

文件:135.47 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel MOSFET uses advanced trench technology

文件:674.91 Kbytes Page:5 Pages

DOINGTER

杜因特

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK

文件:135.47 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.09 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00403 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V

文件:76.61 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK

文件:135.47 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00406 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.09 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 9.0 A, 60 V

文件:67.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00402 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:112.93 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:126.6 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

12 Amps, 60 Volts, Logic Level N?묬hannel DPAK

文件:126.6 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:960.1 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件:962.41 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:97.81 Kbytes Page:9 Pages

ONSEMI

安森美半导体

NTD30产品属性

  • 类型

    描述

  • 型号

    NTD30

  • 制造商

    EDI

  • 制造商全称

    Electronic devices inc.

  • 功能描述

    HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

更新时间:2025-8-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
10248
全新原装正品/价格优惠/质量保障
ON
24+
SOT252
30000
原装正品公司现货,假一赔十!
ON/安森美
20+
TO-252
368
深圳原装无铅现货正规报关
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
ON(安森美)
24+
TO-252
12048
原厂可订货,技术支持,直接渠道。可签保供合同
ON
21+
SOT252
10000
只做原装,质量保证
ON
25+
TO-252
6000
全新原装现货、诚信经营!
ON/安森美
24+
TO252
8950
BOM配单专家,发货快,价格低
ONSEMI/安森美
2410+
TO-252
80000
原装正品.假一赔百.正规渠道.原厂追溯.
ONSemi
24+
TO-252-3
13725
只做原装 有挂有货 假一赔十

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