isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 24V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N Channel DPAK MOSFET 30 Amps, 24 Volts

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Pb-Free Packages are Available;

Power MOSFET 30 Amps, 24 Volts

文件：53.42 Kbytes Page：6 Pages

Power MOSFET 30 Amps, 24 Volts

文件：134.95 Kbytes Page：5 Pages

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Power MOSFET 30 Amps, 24 Volts

Power MOSFET 30 Amps, 24 Volts

文件：134.95 Kbytes Page：5 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01523 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01525 Mbytes Page：8 Pages

Power MOSFET 30 Amps, 24 Volts

文件：53.42 Kbytes Page：6 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01525 Mbytes Page：8 Pages

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.