NTD20N03L价格

参考价格:¥2.0547

型号:NTD20N03L27T4G 品牌:ONSemi 备注:这里有NTD20N03L多少钱,2026年最近7天走势,今日出价,今日竞价,NTD20N03L批发/采购报价,NTD20N03L行情走势销售排行榜,NTD20N03L报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Bychip

百域芯

30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

UMW

友台半导体

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features • Ultra−Low RDS(

ONSEMI

安森美半导体

Power MOSFET

MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft

ONSEMI

安森美半导体

Power MOSFET

文件:100.86 Kbytes Page:5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01525 Mbytes Page:8 Pages

VBSEMI

微碧半导体

单 N 沟道逻辑电平功率 MOSFET 30V,20A,27mΩ

ONSEMI

安森美半导体

Power MOSFET

文件:100.86 Kbytes Page:5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:959.99 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01524 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:100.86 Kbytes Page:5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01581 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01525 Mbytes Page:8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:288.56 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件:1.01516 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01546 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:959.95 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01522 Mbytes Page:8 Pages

VBSEMI

微碧半导体

NTD20N03L产品属性

  • 类型

    描述

  • 型号

    NTD20N03L

  • 功能描述

    MOSFET 30V 20A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ON(安森美)
24+
标准封装
8048
全新原装正品/价格优惠/质量保障
ON
22+
TO-252
3000
原装正品,支持实单
OnSemi
25+
8
公司优势库存 热卖中!!
ON(安森美)
23+
标准封装
8000
正规渠道,只有原装!
ON
24+
DPAK4LEADSingleG
8866
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON Semiconductor
23+
TO2523 DPak (2 Leads + Tab) SC
8000
只做原装现货
ON Semiconductor
23+
TO2523 DPak (2 Leads + Tab) SC
7000
ON/安森美
2447
DPAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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