丝印代码：20N03L；OptiMOS Buck converter series

OptiMOS Buck converter series Feature • N-Channel • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters

丝印代码：20N60A4；600V, SMPS Series N-Channel IGBTs

文件：908.79 Kbytes Page：8 Pages

丝印代码：20N03L；OptiMOS Buck converter series Feature Ideal for fast switching buck converters

文件：9.34933 Mbytes Page：9 Pages

OptiMOS Buck converter series

丝印代码：20N03L；OptiMOS??Buck converter series

Feature • N-Channel • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • 175°C operating temperature • dv/dt rated • Ideal for fast switching buck converters • Pb.free lead plating, RoHS compliant

OptiMOS Buck converter series Feature Ideal for fast switching buck converters

文件：9.34933 Mbytes Page：9 Pages

OptiMOS Buck converter series

OptiMOS Buck converter series Feature • N-Channel • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters

TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications

20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications