20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel 30-V (D-S) MOSFET

文件：1.01546 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET

文件：1.01522 Mbytes Page：8 Pages