20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications

N-Channel 30-V (D-S) MOSFET

文件：1.01573 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01516 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：288.56 Kbytes Page：2 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01546 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.95 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01522 Mbytes Page：8 Pages