型号 功能描述 生产厂家 企业 LOGO 操作
NTBG080N120SC1_V01

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interc

ONSEMI

安森美半导体

更新时间:2025-9-26 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2511
TO-263
5904
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ONSEMI
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
24+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择
Onsemi
22+
TO263
9600
安森美现货库存,终端可送样
ON(安森美)
2447
D2PAK-7
105000
800个/圆盘一级代理专营品牌!原装正品,优势现货,长
ON(安森美)
23+
14136
公司只做原装正品,假一赔十
ON
两年内
NA
769
实单价格可谈
ON/安森美
24+
TO-263
2000
原装现货 假一罚十
ON/安森美
22+
TO-263
9000
原装正品,支持实单!
ON
24+
NA
3000
进口原装 假一罚十 现货

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