N-Channel Split-Gate Trench Enhancement Mode MOSFE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04HLF and NP60N04ILF are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS =

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04HLF and NP60N04ILF are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS =

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.1mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.95mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.85mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.9 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.9 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.9 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.9 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.85mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.85 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

MOS FIELD EFFECT TRANSISTOR

Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Designed for automotive application a

MOS FIELD EFFECT TRANSISTOR

Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.85 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

MOS FIELD EFFECT TRANSISTOR

Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Designed for automotive application a

MOS FIELD EFFECT TRANSISTOR

Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.85 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

MOS FIELD EFFECT TRANSISTOR

Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Designed for automotive application a

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