MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel MOSFET uses advanced trench technology

文件：1.59039 Mbytes Page：5 Pages

Nch Single Power MOSFET 40V 60A 4.3mohm MP-25K/TO-220 Automotive

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) • Designed for automotive application

MOS FIELD EFFECT TRANSISTOR

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40V, 60A N-CH FAST SWITCHING MOSFETS

DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet

N-Channel 4 0-V (D-S) MOSFET

文件：1.64313 Mbytes Page：7 Pages

N-Channel Power MOSFET

文件：3.67549 Mbytes Page：5 Pages

N-Channel MOSFET uses advanced trench technology

文件：2.73841 Mbytes Page：5 Pages

N-Channel 100V(D-S) MOSFET

文件：4.3536 Mbytes Page：7 Pages