40V, 60A N-CH FAST SWITCHING MOSFETS

DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet

40V, 60A N-CH FAST SWITCHING MOSFETS

DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet

40V, 60A N-CH FAST SWITCHING MOSFETS

DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet

MOSFET

N-Channel 40-V (D-S) MOSFET

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N-Channel MOSFET uses advanced trench technology

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40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f

40 V – 60 A – N-channel Power MOS FET Application: Automotive

Description The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.9 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for

N-Channel Power MOSFET

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Product Scout Automotive

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