MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04HLF and NP60N04ILF are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS =

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

40V, 60A N-CH FAST SWITCHING MOSFETS

DESCRIPTION The AM60N04 is available in PDFN8(3.3x3.3) Package. FEATURE  RDS(ON), typ.=6.8 mΩ@VGS=10V  RDS(ON), typ.=10 mΩ@VGS=4.5V  Fast Switching Mosfet

N-Channel 4 0-V (D-S) MOSFET

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N-Channel Power MOSFET

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N-Channel MOSFET uses advanced trench technology

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N-Channel 100V(D-S) MOSFET

文件：4.3536 Mbytes Page：7 Pages