SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The NP60N04HLF and NP60N04ILF are N-channel

MOS Field Effect Transistors designed for high current

switching applications.

FEATURES

• Super low on-state resistance

RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A)

RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

• Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)

• Built-in gate protection diode