位置：首页 > IC中文资料 > NP36N10SDE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP36N10SDE | MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 3500 pF TYP. (VDS = 2 | RENESAS 瑞萨 |   | |
NP36N10SDE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 33mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP36N10SDE | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
NP36N10SDE | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 3500 pF TYP. (VDS = 2 | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 3500 pF TYP. (VDS = 2 | RENESAS 瑞萨 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 58mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
20+ |
TO-263 |
300000 |
现货很近!原厂很远!只做原装 |
|||
RENESAS/瑞萨 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENE |
24+ |
NA/ |
13470 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
TO263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS |
2023+ |
TO252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
RENESAS |
TO-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
VBSEMI/台湾微碧 |
24+ |
MP-3ZKTO-252 |
60000 |
||||
NEC |
24+ |
TO-252 |
8866 |
NP36N10SDE规格书下载地址
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DdatasheetPDF页码索引
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