| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EMB36N10A | N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 |   | |
EMB36N10A | Power MOSFETs-N Channel | EXCELLIANCE 杰力科技 | | |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 58mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 3500 pF TYP. (VDS = 2 | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMC |
11+PBF |
TO-252 |
357 |
现货 |
|||
EMC/杰力 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
EMC |
23+ |
TO-252 |
21326 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
EMC/杰力 |
25+ |
TO-252 |
1180 |
全新原装正品支持含税 |
|||
杰力 |
20+ |
TO-252 |
32550 |
原装优势主营型号-可开原型号增税票 |
|||
EMC/杰力 |
24+ |
TO-252 |
60000 |
||||
杰力 |
24+ |
TO-252 |
65300 |
一级代理/放心购买! |
|||
EMC |
23+ |
TO252 |
7000 |
||||
EMC |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
EMB |
23+ |
SOP |
8560 |
受权代理!全新原装现货特价热卖! |
EMB36N10A芯片相关品牌
EMB36N10A规格书下载地址
EMB36N10A参数引脚图相关
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- EMB2FHA
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- EMB2032
- EMB2021
- EMB2010
- EMB1SU
- EMB1S
- EMB1MU
- EMB1MN
- EMB1M
- EMB1FU
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