| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EMD36N10A | N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 |   | |
EMD36N10A | Power MOSFETs-N Channel | EXCELLIANCE 杰力科技 | | |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 3500 pF TYP. (VDS = 2 | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
N Channel Enhancement Mode MOSFET 文件：1.28284 Mbytes Page：7 Pages | STANSON 司坦森 | | ||
36A, 100V N-CHANNEL POWER MOSFET 文件：218.48 Kbytes Page：5 Pages | UTC 友顺 | |
EMD36N10A产品属性
- 类型
描述
- Channel：
Single N
- BVDSS(V)：
100
- VGS(±V)：
20
- ID(A)：
30
- RDS(ON)(10V) Max.(mΩ)：
36
- RDS(ON)(5V) Max.(mΩ)：
- RDS(ON)(4.5V) Max.(mΩ)：
- RDS(ON)(2.5V) Max.(mΩ)：
- Qg(10V)Typ.(nC)：
20
- CissTyp.(pF)：
1503
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMC |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
EXCELLIAN |
23+ |
TO252 |
66538 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
EMC |
24+ |
SOT |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
EMC/杰力 |
19+ |
EDFN |
2500 |
上传都是百分之百进口原装现货 |
|||
EMC |
25+23+ |
TO251 |
68753 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
EMC |
10+ |
TO-252 |
880000 |
明嘉莱只做原装正品现货 |
|||
EMC |
2450+ |
TO-252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
EMC |
1706+ |
TO251 |
8660 |
只做原装进口,假一罚十 |
|||
EMC |
23+ |
TO-252 |
7300 |
专注配单,只做原装进口现货 |
|||
EMC |
25+ |
TO-252 |
90000 |
全新原装现货 |
EMD36N10A芯片相关品牌
EMD36N10A规格书下载地址
EMD36N10A参数引脚图相关
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DdatasheetPDF页码索引
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