位置：首页 > IC中文资料第6832页 > NESG210719
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG210719 | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 |   | |
NESG210719 | NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 | | |
NESG210719 | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | | |
NESG210719 | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) | CEL | | |
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 | | ||
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 | | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 | | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | |
NESG210719产品属性
- 类型
描述
- 型号
NESG210719
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
SOT-523 |
9600 |
原装现货,优势供应,支持实单! |
|||
CEL |
24+ |
SOT-523 |
15000 |
原装现货假一赔十 |
|||
NEC |
21+ |
SOT-23 |
10000 |
原装现货假一罚十 |
|||
NEC |
22+ |
SOT23-3 |
3000 |
原装正品,支持实单 |
|||
CEL |
2025+ |
SOT-523 |
7695 |
全新原厂原装产品、公司现货销售 |
|||
CEL |
19+ |
SOT-523 |
200000 |
||||
NEC |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
CEL |
20+ |
SOT-523 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
23+ |
SOT-523 |
50000 |
原装正品 支持实单 |
|||
CEL |
新年份 |
SOT-523 |
15000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
NESG210719规格书下载地址
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DdatasheetPDF页码索引
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