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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG210719-A | NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 |   | |
NESG210719-A | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | | |
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 | | ||
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | |
NESG210719-A产品属性
- 类型
描述
- 型号
NESG210719-A
- 功能描述
射频硅锗晶体管 NPN Amp/Oscillator
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
42300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
23+ |
SOT-523 |
50000 |
原装正品 支持实单 |
|||
CEL |
SOT-523 |
15000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
CEL |
16+ |
SOT-523 |
15000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
NEC |
2450+ |
SOT923-3 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
NEC |
22+ |
SOT23-3 |
3000 |
原装正品,支持实单 |
|||
NEC |
23+ |
SOT723 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
CEL |
2025+ |
SOT-523 |
7695 |
全新原厂原装产品、公司现货销售 |
|||
RENESAS/瑞萨 |
23+ |
SOT-23 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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NESG210719-A规格书下载地址
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DdatasheetPDF页码索引
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