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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG210719-A | NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 |   | |
NESG210719-A | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | | |
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 | | ||
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | |
NESG210719-A产品属性
- 类型
描述
- 型号
NESG210719-A
- 功能描述
射频硅锗晶体管 NPN Amp/Oscillator
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MW/台湾明纬 |
2450+ |
9850 |
只做原装正品现货或订货假一赔十! |
||||
MW 台湾明纬 |
25+ |
- |
499 |
全新原装 |
|||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
POWER SUPPLY |
25+ |
71 |
公司优势库存 热卖中! |
||||
NEC |
26+ |
220 |
现货供应 |
||||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MW |
23+ |
模块 |
1000 |
原装正品,假一罚十 |
|||
MEANWEL |
24+ |
模块 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Meanwel |
18+ |
meanwell |
85600 |
保证进口原装可开17%增值税发票 |
|||
MW 台湾明纬 |
2447 |
- |
105000 |
1个/盒一级代理专营品牌!原装正品,优势现货,长期排 |
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NESG210719-A规格书下载地址
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DdatasheetPDF页码索引
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