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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG210719-T1-A | NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 |   | |
NESG210719-T1-A | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | | |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 | | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr. • 3-pin ultra super minimold (19, 1608 PKG) | RENESAS 瑞萨 | | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) 文件：1.1949 Mbytes Page：9 Pages | CEL | |
NESG210719-T1-A产品属性
- 类型
描述
- 型号
NESG210719-T1-A
- 功能描述
射频硅锗晶体管 NPN Amp/Oscillator
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
42300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
22+ |
M33 |
3000 |
原装正品,支持实单 |
|||
NEC |
2450+ |
SOT923-3 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
RENESAS/瑞萨 |
24+ |
SOT-523 |
9600 |
原装现货,优势供应,支持实单! |
|||
CEL |
19+ |
SOT-523 |
200000 |
||||
NEC |
2447 |
SOT23 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
CEL |
20+ |
SOT-523 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
06+ |
SOT23 |
30000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2023+ |
SOT23 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
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NESG210719-T1-A规格书下载地址
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DdatasheetPDF页码索引
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