N-CHANNEL GaAs MES FET

10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power (CW) with high linear gain, high efficiency and low distortion. Reli

N-CHANNEL GaAs MES FET

10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power (CW) with high linear gain, high efficiency and low distortion. Reli

GaAs MES FET

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. FEATURES • Class A operation • H

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

L/S BAND MEDIUM POWER GaAs MESFET

DESCRIPTION The NE6501077 is a medium power GaAs MESFET designed for up to a 10 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent per

NECS 10 W L & S-BAND POWER GaAs MESFET

10 W L & S-BAND POWER GaAs MESFET

文件：259.51 Kbytes Page：7 Pages

10 W L & S-BAND POWER GaAs MESFET

文件：259.51 Kbytes Page：7 Pages

封装/外壳：SOT-445 变式 包装：卷带（TR） 描述：FET RF 15V 2.3GHZ 3M 分立半导体产品 晶体管 - FET，MOSFET - 射频

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

L/S BAND MEDIUM POWER GaAs MESFET

文件：32.95 Kbytes Page：2 Pages

650 V, 1 A ultrafast recovery rectifier

1. General description High power density, ultrafast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP5 (SOD128) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage VR ≤ 650 V • Forward c

650 V, 1 A ultrafast recovery rectifier

1. General description High power density, ultrafast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP5 (SOD128) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage VR ≤ 650 V • Forward c

650 V, 1 A ultrafast recovery rectifier

1. General description High power density, ultrafast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP3 (SOD123W) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage VR ≤ 650 V • Forward

650 V, 1 A ultrafast recovery rectifier

1. General description High power density, ultrafast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP3 (SOD123W) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage VR ≤ 650 V • Forward

One Channel Direct Drive Speech Controller

INTRODUCTION SN65010 is a 10 seconds one-channel single chip voice synthesizer IC which contains a PWM Direct Drive Circuit. There is one 4-bit I/O port and built in a tiny controller. By programming through the tiny controller, user’s applications including section combination, trigger modes, ou