3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

丝印代码：A2；SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

丝印代码：A2；SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver

丝印代码：A3；SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

丝印代码：A3；SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

文件：166.31 Kbytes Page：7 Pages

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

文件：166.31 Kbytes Page：7 Pages

NECs 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

包装：盒 描述：EVAL BOARD NE5520379A 开发板，套件，编程器 射频评估和开发套件，开发板

封装/外壳：4-SMD，扁平引线 包装：托盘 描述：FET RF 15V 915MHZ 79A-PKG 分立半导体产品 晶体管 - FET，MOSFET - 射频

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N