Dolby ADM digital audio decoder

DESCRIPTION The NE5241 is a complete stereo digital to audio converter for the Dolby ADM digital audio system, which allows CD quality stereo audio to be delivered with data rates on the order of 400 to 600kb/s. FEATURES • Wide dynamic range: >95dB • Low distortion:

Dolby ADM digital audio decoder

GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT (Heterojunction Bipolar Transistor) developed for L to S band mobile communication equipment. FEATURES • Ideal for low noise and high gain amplifiers NF = 0.95 dB TYP., Ga = 17 dB TYP. (@

丝印代码：V45；GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT (Heterojunction Bipolar Transistor) developed for L to S band mobile communication equipment. FEATURES • Ideal for low noise and high gain amplifiers NF = 0.95 dB TYP., Ga = 17 dB TYP. (@

Dolby ADM digital audio decoder

DESCRIPTION The NE5241 is a complete stereo digital to audio converter for the Dolby ADM digital audio system, which allows CD quality stereo audio to be delivered with data rates on the order of 400 to 600kb/s. FEATURES • Wide dynamic range: >95dB • Low distortion:

Dolby ADM digital audio decoder

DESCRIPTION The NE5241 is a complete stereo digital to audio converter for the Dolby ADM digital audio system, which allows CD quality stereo audio to be delivered with data rates on the order of 400 to 600kb/s. FEATURES • Wide dynamic range: >95dB • Low distortion:

NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件：196 Kbytes Page：6 Pages

L To S Band Low Noise And High Gain Amplifier NPN Gaas Hbt

包装：散装 描述：EVAL BOARD FOR NE52418 开发板，套件，编程器 射频评估和开发套件，开发板

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 5V 4-SMINI MOLD 分立半导体产品 晶体管 - 双极（BJT）- 射频

NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件：196 Kbytes Page：6 Pages

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request