L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER

NPN GaAs HBT

DESCRIPTION

The NE52418 is an NPN GaAs HBT (Heterojunction Bipolar Transistor) developed for L to S band mobile

communication equipment.

FEATURES

• Ideal for low noise and high gain amplifiers

NF = 0.95 dB TYP., Ga = 17 dB TYP. (@ VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZL = 50 W)

IIP3 = +8 dBm TYP. (@ VCE = 2.5 V, IC = 8 mA, f = 2 GHz, 1 tone, ZS = ZL = Zopt)

• 4-pin super minimold package employed (SOT-343 style)

• Grounded emitter transistor

APPLICATIONS

• Mobile communication terminals and other L to S band microwave communication applications