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NE3515S02价格
参考价格：￥10.6340
型号：NE3515S02-A 品牌：CEL 备注：这里有NE3515S02多少钱，2025年最近7天走势，今日出价，今日竞价，NE3515S02批发/采购报价，NE3515S02行情走势销售排行榜，NE3515S02报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE3515S02 | HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs |   | |
NE3515S02 | HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | |
NE3515S02 | X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：225.18 Kbytes Page：12 Pages | RENESAS 瑞萨 | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：225.18 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
封装/外壳：4-SMD，扁平引线 包装：托盘 描述：FET RF HFET 12GHZ 2V 10MA S02 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Labs | | ||
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：225.18 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF HFET 12GHZ 2V 10MA S02 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Labs | |
NE3515S02产品属性
- 类型
描述
- 型号
NE3515S02
- 功能描述
射频GaAs晶体管 X to Ku-BAND SUPER LOW NOISE AMP N-CH
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2511 |
假一赔十 |
8116 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
RENESAS |
24+ |
SO2 |
5000 |
全新原装正品,现货销售 |
|||
CEL |
24+ |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
||||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS |
21+ |
SMT84 |
1458 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
CEL |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
12+ |
SMT84 |
880000 |
明嘉莱只做原装正品现货 |
|||
Renesas/瑞萨 |
2324+ |
NA |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
|||
RENESAS/瑞萨 |
23+ |
S02 |
50000 |
全新原装正品现货,支持订货 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
NE3515S02规格书下载地址
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DdatasheetPDF页码索引
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