位置：首页 > IC中文资料第5215页 > NE3515S02-T1D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE3515S02-T1D | HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs |   | |
NE3515S02-T1D | X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：225.18 Kbytes Page：12 Pages | RENESAS 瑞萨 | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF HFET 12GHZ 2V 10MA S02 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Labs | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr | CEL California Eastern Labs | | ||
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET 文件：225.18 Kbytes Page：12 Pages | RENESAS 瑞萨 | |
NE3515S02-T1D产品属性
- 类型
描述
- 型号
NE3515S02-T1D
- 功能描述
射频GaAs晶体管 Super Low Noise Pseudomorphic
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LSSJ |
1736+ |
. |
8298 |
只做进口原装正品假一赔十! |
|||
RENESAS |
1604+ |
假一赔十 |
276 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS(瑞萨)/IDT |
20+ |
S02 |
2000 |
||||
RENESAS |
23+ |
SMT-86 |
30000 |
代理全新原装现货,价格优势 |
|||
RENESAS/瑞萨 |
2021+ |
SMT-86 |
3000 |
十年专营原装现货,假一赔十 |
|||
RENESAS |
22+23+ |
SO2 |
8000 |
新到现货，只做原装进口 |
|||
NEC |
24+ |
SMT-86 |
3879 |
长期供应原装现货实单可谈 |
|||
RENESAS |
TransJFET |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS |
24+ |
SO2 |
5000 |
全新原装正品,现货销售 |
|||
NEC |
2020+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
NE3515S02-T1D规格书下载地址
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DdatasheetPDF页码索引
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