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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HYM321000S | 1Mx32-BitDynamicRAMModule2Mx16-BitDynamicRAMModule TheHYM321000S/GS-50/-60isa4MByteDRAMmoduleorganizedas1048576wordsby32-bitina72-pinsingle-in-linepackagecomprisingtwoHYB5118160BSJ1M×16DRAMsin400milwideSOJ-packagesmountedtogetherwithtwo0.2µFceramicdecouplingcapacitorsonaPCboard. AdvancedInformation | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 |  |   |
1Mx32-BitDynamicRAMModule2Mx16-BitDynamicRAMModule TheHYM321000S/GS-50/-60isa4MByteDRAMmoduleorganizedas1048576wordsby32-bitina72-pinsingle-in-linepackagecomprisingtwoHYB5118160BSJ1M×16DRAMsin400milwideSOJ-packagesmountedtogetherwithtwo0.2µFceramicdecouplingcapacitorsonaPCboard. AdvancedInformation | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | | | |
1Mx32-BitDynamicRAMModule2Mx16-BitDynamicRAMModule TheHYM321000S/GS-50/-60isa4MByteDRAMmoduleorganizedas1048576wordsby32-bitina72-pinsingle-in-linepackagecomprisingtwoHYB5118160BSJ1M×16DRAMsin400milwideSOJ-packagesmountedtogetherwithtwo0.2µFceramicdecouplingcapacitorsonaPCboard. AdvancedInformation | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | | | |
ULTRALOWNOISEPSEUDOMORPHICHJFET DESCRIPTION NECsNE321000isaHetero-JunctionFETchipthatutilizesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreatehighelectronmobility.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercial,industrialandspaceapplications. NECsstringe | CEL California Eastern Labs |  | | |
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE321000isHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems,industrialand spaceapplications. FEATURES •SuperLowNoiseFigure&High | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
CtoKaBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FETCHIP DESCRIPTION TheNE321000isHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems,industrialandspaceapplications. FEATURES •SuperLowNoiseFigure&Hi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
ULTRALOWNOISEPSEUDOMORPHICHJFET 文件：135.99 Kbytes Page：6 Pages | CEL California Eastern Labs | | |
HYM321000S产品属性
- 类型
描述
- 型号
HYM321000S
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
代替LTC4054 |
24+ |
SOT-23 |
30000 |
原装现货 |
|||
INFINGON |
24+ |
TSOP |
26 |
||||
HYM/PB |
23+ |
SOT23-5 |
6000 |
专注配单,只做原装进口现货 |
|||
HYM |
23+ |
SOT23-5 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
HYM |
TSOT23-5 |
43000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
HAOHONG |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
HYM |
23+ |
SOT23-5 |
50000 |
全新原装正品现货,支持订货 |
|||
HYM |
24+ |
SOT23-5 |
5000 |
全现原装公司现货 |
|||
HYM |
24+ |
SOT23-5 |
9600 |
原装现货,优势供应,支持实单! |
|||
HYM/PB |
20+ |
SOT23-5 |
43000 |
原装优势主营型号-可开原型号增税票 |
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