Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

Dual P-Channel Enhancement Mode Field Effect Transistor

Dual P-Channel 30-V (D-S) MOSFET

文件：1.0589 Mbytes Page：9 Pages

RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Hysteretic Boost-Buck (cuk) LED Driver IC

文件：515.35 Kbytes Page：9 Pages