Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description\nSO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored\nto minimize on-state resistance and provide superior switching performance.These d -2.7 A, -20 V. RDS(ON) = 0.14 W @ VGS = -4.5 V\n                   RDS(ON) = 0.19 W @ VGS = -2.7 V\n                  RDS(ON) = 0.2 W @ VGS = -2.5 V.\nHigh density cell design for extremely low RDS(ON).\nHigh power and current handling capability in a widely used surface mount package.\nDual MOSFET ;

Dual P-Channel 30-V (D-S) MOSFET

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Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

Dual P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.

Dual P-Channel Enhancement-Mode MOSFET

Dual P-Channel Enhancement-Mode MOSFET

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：191.61 Kbytes Page：8 Pages

Dual P-Channel 20-V (D-S) MOSFET

文件：48.7 Kbytes Page：4 Pages