双 P 沟道，2.5V 指定，PowerTrench® MOSFET，-20V，-3.8A，75mΩ

这些P沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •-3.8A、-20V RDS(on) = 0.075 Ω @ VGS = -4.5V RDS(on) = 0.105 Ω @ VGS = -2.5 V\n•低栅极电荷（7nC典型值）\n•快速开关速度\n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力;

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Dual P-Channel 30-V (D-S) MOSFET

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Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

Dual P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features · –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.

Dual P-Channel Enhancement-Mode MOSFET

Dual P-Channel Enhancement-Mode MOSFET

Dual P-Channel 20-V (D-S) MOSFET

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