General Description

This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage apllications such as DC motor control and DC/DC conversion where fast switching,low in-line power loss, and resistance to transients are

needed.

Features

• -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V

RDS(on) = 0.19 Ω @ VGS = -2.7 V

RDS(on) = 0.20 Ω @ VGS = -2.5 V.

• High density cell design for extremely low RDS(on).

• High power and current handling capability in a widely used surface mount package.

• Dual MOSFET in surface mount package.