General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

· –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V

RDS(ON) = 105 mW @ VGS = –3.0 V

RDS(ON) = 115 mW @ VGS = –2.7 V

· Extended VGSS range (±12V) for battery applications

· Low gate charge

· High performance trench technology for extremely

low RDS(ON)

· High power and current handling capability

Applications

· Load switch

· Motor drive

· DC/DC conversion

· Power management