N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

N-Channel Enhancement Mode MOSFET

General Features VDS = 20V ID =2.3 A RDS(ON)

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel Mosfet

Application Load/Power Switching Interfacing Switching Logic Level Shift

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particula

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particula

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

N-Channel, Logic Level, PowerTrench® MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low v

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

N-Channel Enhancement Mode MOSFET

Features ® Vos =30Vio = 2A Rosin

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-0.9 A (VGS =-4.5V) ● RDS(ON)

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularl

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularl

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：280.65 Kbytes Page：9 Pages

N 沟道逻辑电平增强型场效应晶体管，20V，1.3A，0.21Ω

P-Channel Logic Level Enhancement Mode Field Effect Transistor

P 沟道逻辑电平增强型场效应晶体管，-20V，-1A，0.41Ω

P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：456.46 Kbytes Page：8 Pages

P-Channel 20-V (D-S) MOSFET

文件：1.035609 Mbytes Page：9 Pages

P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：271.06 Kbytes Page：9 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.047849 Mbytes Page：9 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：74.68 Kbytes Page：6 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：445.36 Kbytes Page：8 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：74.68 Kbytes Page：6 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.04768 Mbytes Page：9 Pages

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC DRAM 256MBIT PAR 54TSOP II 集成电路（IC） 存储器

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：管件 描述：IC DRAM 256MBIT PAR 54TSOP II 集成电路（IC） 存储器