N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularl

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：74.68 Kbytes Page：6 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularl

N 沟道逻辑电平增强型场效应晶体管，30V，1.7A，85mΩ

SuperSOT™-3 N沟道逻辑电平增强模式场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合笔记本电脑、手提电话、PCMCIA卡和其他电池供电电路中的低电压应用，此类应用需要在很小尺寸的表面贴装封装中提供快速开关和低线路内功率损耗。 •1.7 A，30 V。 RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V\n•采用专有SuperSOT™-3技术设计的工业标准SOT-23表面贴装封装，可实现卓越的热性能和电气性能\n•高密度设计可实现极低的RDS(ON)\n•出色的导通阻抗和最大DC电流能力\n•紧凑的工业标准SOT-23表面贴装封装;

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N 沟道逻辑电平增强型场效应晶体管 30V，1.6A，125mΩ

这些N沟道逻辑电平增强模式场效应晶体管采用飞兆专有的高单元密度、DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 此类器件特别适合笔记本电脑、便携电话、PCMICA卡等低电压应用及其他需要采用极小封装外形表面贴装封装、具有快速开关和低线内功率损耗的电池供电电路。 •1.6 A，30 V。 RDS(ON) = 0.125Ω @ VGS= 4.5 V。\n•专有封装设计使用铜引线框架，可提供出色的热和电气能力。\n•采用高密度单元设计，可实现极低的RDS(ON)。\n•出色的导通阻抗和最大的DC电流能力。\n•紧凑型工业标准SOT-23表面贴装封装。;

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：445.36 Kbytes Page：8 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：74.68 Kbytes Page：6 Pages

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa