N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularl

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N 沟道逻辑电平增强型场效应晶体管，30V，1.7A，85mΩ

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

Card Edge Connectors 0.156” (3.96mm) Pitch

Features: • 0.156” (3.96mm) contact spacing x 0.140” (3.56mm) row spacing • Accepts 0.062” (1.57mm) nominal thickness P.C. board • Low profile insulator body, 0.470” (11.94mm) • Contact termination options include P.C. tail, wire hole, extender board bends • Dual row configuration • Large va

True-rms 2000 A Clamp Meters

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THRU-HOLE THREADED INSERT W/FLANGE

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3M??Power Clamp Wiremount Socket

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Introducing Full-featured Level Transmitters with a User-friendly Price Point.

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