N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularl

N 沟道逻辑电平增强型场效应晶体管，30V，1.7A，85mΩ

SuperSOT™-3 N沟道逻辑电平增强模式场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合笔记本电脑、手提电话、PCMCIA卡和其他电池供电电路中的低电压应用，此类应用需要在很小尺寸的表面贴装封装中提供快速开关和低线路内功率损耗。 •1.7 A，30 V。 RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V\n•采用专有SuperSOT™-3技术设计的工业标准SOT-23表面贴装封装，可实现卓越的热性能和电气性能\n•高密度设计可实现极低的RDS(ON)\n•出色的导通阻抗和最大DC电流能力\n•紧凑的工业标准SOT-23表面贴装封装;

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel 30-V (D-S) MOSFET

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