P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-0.9 A (VGS =-4.5V) ● RDS(ON)

P 沟道逻辑电平增强型场效应晶体管，-30V，-0.9A，300mΩ

这些P沟道逻辑电平增强型功率场效应晶体管采用飞兆专有的高密度、DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合笔记本电脑电源管理、便携电子产品及其他电池供电电路等低电压应用，此类应用需要在很小尺寸的表面贴装封装中实现快速高侧开关和低线内功率损耗。 • -0.9 A, -30 VrDS(ON) = 0.5 Ω @ VGS = -4.5 VrDS(ON) = 0.3 Ω @ VGS = -10 V\n• Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.\n• High Density Cell Design for Extremely Low rDS(ON)\n• Exceptional On-Resistan;

Trans MOSFET P-CH 30V 0.9A 3-Pin SuperSOT T/R

丝印代码：352A；P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：271.06 Kbytes Page：9 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.047849 Mbytes Page：9 Pages

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

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Square Type

文件：32 Kbytes Page：1 Pages

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件：140.77 Kbytes Page：9 Pages