isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET

N-Channel Power MOSFET

文件：595.58 Kbytes Page：5 Pages

N-Channel MOSFET uses advanced SGT technology

文件：1.61424 Mbytes Page：5 Pages

N-Channel Power MOSFET

文件：595.58 Kbytes Page：5 Pages

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

N-Channel Power MOSFET

文件：595.58 Kbytes Page：5 Pages

N-Channel Enhancement Mode Power Mosfet

文件：3.98832 Mbytes Page：7 Pages

N-Channel Enhancement Mode Power Mosfet

文件：3.65918 Mbytes Page：7 Pages

Superior Avalanche Rugged Technology

文件：989.45 Kbytes Page：9 Pages