N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

■ TYPICAL RDS(on) = 5.5 mΩ ■ 100 AVALANCHE TESTED ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD INDUSTRIAL APPLICATIONS: ■ SMPS & UPS ■ MOTOR CONTROL ■ WELDING EQUIPMENT ■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS

N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

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