VDSS = 100 V

ID25 = 165 A

RDS(on)= 8 m
Ω

trr ≤ 250 ns

Single MOSFET Die

Features

• Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low drain to tab capacitance(<25pF)

• Low RDS (on) HDMOS™ process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS) rated

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• AC motor control