Single MOSFET Die

VDSS = 100V ID25 = 180A RDS(on) ≤ 8mΩ Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features International Standard Packages High Current Handling Capability Avalanche Rated Low RDS(on) HDMOSTM Process Fast intrinsic diode

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=180A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

N通道HiPerFET

HiperFET Power MOSFETs

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OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

N-Channel Power MOSFET

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N-Channel Enhancement Mode Power Mosfet

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N-Channel Enhancement Mode Power Mosfet

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Superior Avalanche Rugged Technology

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