| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCEP10N12 | 30-120V N-Channel SGT-II MOSFET | NCEPOWER 新洁能 |   | |
30-120V N-Channel SGT-II MOSFET | NCEPOWER 新洁能 | | ||
30-120V N-Channel SGT-II MOSFET | NCEPOWER 新洁能 | | ||
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device | GESS | | ||
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device | GESS | | ||
N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE新洁能 |
25+ |
DFN5X6-8L |
100000 |
新结能全线供应,支持终端生产 |
|||
NCE/新洁能 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NCE |
25+ |
TO-252 |
20000 |
原装正品价格优惠,志同道合共谋发展 |
|||
新洁能 |
两年内 |
NA |
1786 |
实单价格可谈 |
|||
NCE |
20+ |
TO-252 |
10 |
原装现货17377264928微信同号 |
|||
NCE/新洁能 |
25+ |
DFN5X6-8L |
60000 |
全新原装现货特价销售,欢迎来电查询 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NCE POWER |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
NCE |
2026+ |
- |
30000 |
华南总代 |
|||
NCE新洁能 |
22+ |
DFN5X6-8L |
95000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
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NCEP10N12数据表相关新闻
NCEP1278
NCEP1278
2021-9-7NCEP1278
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NCEP055N80G
2021-8-19
DdatasheetPDF页码索引
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