型号 功能描述 生产厂家 企业 LOGO 操作
RFP10N12

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

GESS

RFP10N12

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RFP10N12

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

GESS

RFP10N12

Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220AB

ETC

知名厂家

RFP10N12

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFP10N12

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

GESS

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件:89.46 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFP10N12产品属性

  • 类型

    描述

  • 型号

    RFP10N12

  • 制造商

    GESS

  • 制造商全称

    GESS

  • 功能描述

    N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

更新时间:2026-3-1 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
TO-220-3
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
HARRIS(哈利斯)
20+
TO-220-3
3000
FSC
0428+
T0-220
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INTERSIL
17+
TO-220
6200
HAR
24+
N/A
2600
INTERSIL
26+
TO-220
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
F
24+
TO-220A
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INTESIL
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
F
TO-220AB
22+
6000
十年配单,只做原装
INTERSIL/FSC
26+
TO-220
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订

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