位置：首页 > IC中文资料第7947页 > RFP10N12
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP10N12 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device | GESS |   | |
RFP10N12 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
RFP10N12 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GESS | | |
RFP10N12 | Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220AB | ETC 知名厂家 | ETC | |
RFP10N12 | N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
RFP10N12 | N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device | GESS | | ||
N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
RFP10N12产品属性
- 类型
描述
- 型号
RFP10N12
- 制造商
GESS
- 制造商全称
GESS
- 功能描述
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
0428+ |
T0-220 |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTESIL |
23+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
|||
HARRIS(哈利斯) |
20+ |
TO-220-3 |
3000 |
||||
INTERSIL/FSC |
NEW |
TO-220 |
28610 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
HARRIS/哈里斯 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Harris |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
RCA |
新 |
466 |
全新原装 货期两周 |
||||
HAR |
24+ |
N/A |
5000 |
公司存货 |
|||
INTERSIL |
17+ |
TO-220 |
6200 |
||||
F |
24+ |
TO-220A |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
RFP10N12芯片相关品牌
RFP10N12规格书下载地址
RFP10N12参数引脚图相关
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RFP10N12数据表相关新闻
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DdatasheetPDF页码索引
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