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丝印代码：NCE100ED65VT；650V 100A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

丝印代码：NCE100ED65VT4；650V 100A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

丝印代码：NCE100ED65VTP；650V 100A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

丝印代码：NCE100ED65VTP4；650V 100A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

丝印代码：NCE100TD120BTP；1200V, 100A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

丝印代码：NCE100TD120VTP；1200V, 100A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

丝印代码：NCE100TD120VTP4；1200V, 100A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

丝印代码：NCE120ED120VTP；1200V, 120A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology

丝印代码：NCE120ED120VTP4；1200V, 120A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology

丝印代码：NCE12P09S；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A RDS(ON)

丝印代码：NCE14P40K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE14P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -40V,ID = -30A RDS(ON) =11mΩ @ VGS= -10V (Typ) RDS(ON) =15mΩ @ VGS= -4.5V (Typ)

丝印代码：NCE1504R；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 4A RDS(ON)

丝印代码：NCE1507AK；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 7A RDS(ON)

丝印代码：NCE1540AD；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =40A RDS(ON)

丝印代码：NCE1540AF；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1540AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =20A RDS(ON)

丝印代码：NCE1550F；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =50A RDS(ON)

丝印代码：NCE1570；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =70A RDS(ON)

丝印代码：NCE15P25I；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)

丝印代码：NCE15P25J；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P25J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)

丝印代码：NCE15P25JI；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)

丝印代码：NCE15P25JK；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P25JK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)

丝印代码：NCE15P30；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON)

丝印代码：NCE15P30K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON)

丝印代码：NCE160ED120VTP；1200V, 160A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench FS Gen.7 Technology Offering  Lo

丝印代码：NCE160ED120VTP4；1200V, 160A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench FS Gen.7 Technology Offering  Lo

丝印代码：NCE160ED65VTP；650V, 160A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

丝印代码：NCE160ED65VTP；650V, 160A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin

丝印代码：NCE16P07J；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE16P07J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -16V,ID = -7A RDS(O

丝印代码：NCE16P40Q；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE16P40Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ● Power management ● Load switch General Features ● VDS = -40V,ID = -15A RDS(ON)

丝印代码：NCE1805S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =185V,ID =5A RDS(ON)

丝印代码：NCE1810AK；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1810AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =180V,ID =10A RDS(ON)

丝印代码：NCE1826K；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1826K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =185V,ID =26A RDS(ON)

丝印代码：NCE1216；LCE P-Channel Enhancement Mode Power MOSFET

文件：758.66 Kbytes Page：5 Pages

丝印代码：NCE1502R；LCE N-Channel Enhancement Mode Power MOSFET

文件：867 Kbytes Page：6 Pages

丝印代码：NCE1520；LCE N-Channel Enhancement Mode Power MOSFET

文件：1.74352 Mbytes Page：6 Pages

丝印代码：NCE15P25JK；LCE P-Channel Enhancement Mode Power MOSFET

文件：1.06843 Mbytes Page：6 Pages

丝印代码：NCE1216；LCE P-Channel Enhancement Mode Power MOSFET

文件：994.75 Kbytes Page：5 Pages

丝印代码：NCE15P25JK；P-Channel Enhancement Mode Power MOSFET

文件：1.08277 Mbytes Page：6 Pages

丝印代码：NCE1520；N-Channel Enhancement Mode Power MOSFET

文件：1.7443 Mbytes Page：6 Pages

丝印代码：NCE1502R；N-Channel Enhancement Mode Power MOSFET

文件：867.1 Kbytes Page：6 Pages

丝印代码：1013EX；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = -20V,ID =-0.66A RDS(ON

丝印代码：TO-220；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-220；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-220；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-263；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-263；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-263；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-220F；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-220F；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-220F；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-252；600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：1102N；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1102N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 110V,ID = 2A RDS(ON)

丝印代码：TO-263；600V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

丝印代码：TO-263；1200V, 15A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：TO-247；1200V, 15A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：TO-3PN；1200V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

丝印代码：TO-247；1200V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

丝印代码：TO-3PN；1350V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

丝印代码：TO-247；1350V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat