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型号	功能描述	生产厂家企业	LOGO
NCE1	CIT SWITCH 文件：252.92 Kbytes Page：3 Pages	CIT	CIT
NCE100ED65VT	650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin	NCEPOWER 新洁能	NCEPOWER
NCE100ED65VT4	650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin	NCEPOWER 新洁能	NCEPOWER
NCE100ED65VTP	650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin	NCEPOWER 新洁能	NCEPOWER
NCE100ED65VTP4	650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin	NCEPOWER 新洁能	NCEPOWER
NCE100TD120BTP	1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE100TD120VTP	1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE100TD120VTP4	1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE1013E	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = -20V,ID =-0.66A RDS(ON	NCEPOWER 新洁能	NCEPOWER
NCE10TD60B	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60B	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60B	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60BD	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60BD	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60BD	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60BF	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60BF	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60BF	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE10TD60BK	600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE1102N	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1102N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 110V,ID = 2A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE120ED120VTP	1200V, 120A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology	NCEPOWER 新洁能	NCEPOWER
NCE120ED120VTP4	1200V, 120A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology	NCEPOWER 新洁能	NCEPOWER
NCE12P09S	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE14P40K	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE14P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -40V,ID = -30A RDS(ON) =11mΩ @ VGS= -10V (Typ) RDS(ON) =15mΩ @ VGS= -4.5V (Typ)	NCEPOWER 新洁能	NCEPOWER
NCE1504R	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 4A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE1507AK	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 7A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE1540AD	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =40A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE1540AF	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =20A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE1550F	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =50A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE1570	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =70A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE15P25I	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE15P25J	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE15P25JI	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE15P25JK	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE15P30	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE15P30K	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE15T60BD	600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）	NCEPOWER 新洁能	NCEPOWER
NCE15TD120BD	1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD120BT	1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD120LP	1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat	NCEPOWER 新洁能	NCEPOWER
NCE15TD120LT	1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat	NCEPOWER 新洁能	NCEPOWER
NCE15TD135LP	1350V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat	NCEPOWER 新洁能	NCEPOWER
NCE15TD135LT	1350V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat	NCEPOWER 新洁能	NCEPOWER
NCE15TD60B	600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD60BD	600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD60BF	600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD60BP	600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD60BT	600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD65BF	650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD65BP	650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE15TD65BT	650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)	NCEPOWER 新洁能	NCEPOWER
NCE1608N	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 16V,ID =8A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE160ED120VTP	1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench FS Gen.7 Technology Offering  Lo	NCEPOWER 新洁能	NCEPOWER
NCE160ED120VTP4	1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench FS Gen.7 Technology Offering  Lo	NCEPOWER 新洁能	NCEPOWER
NCE160ED65VTP	650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin	NCEPOWER 新洁能	NCEPOWER
NCE160ED65VTP	650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin	NCEPOWER 新洁能	NCEPOWER
NCE160ED65VTP4	650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features  Trench field stop Gen.7 Technology Offerin	NCEPOWER 新洁能	NCEPOWER
NCE16P07J	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE16P07J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -16V,ID = -7A RDS(O	NCEPOWER 新洁能	NCEPOWER
NCE16P40Q	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE16P40Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ● Power management ● Load switch General Features ● VDS = -40V,ID = -15A RDS(ON)	NCEPOWER 新洁能	NCEPOWER
NCE1805S	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =185V,ID =5A RDS(ON)	NCEPOWER 新洁能	NCEPOWER

NCE1产品属性

类型
描述
型号
NCE1
制造商
CIT
制造商全称
CIT Relay & Switch
功能描述
CIT SWITCH

NCE1供应商更多...

更新时间：2025-11-21 14:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	NCE15P25	NCE/新洁能	21+	TO-220	1456		询价
深圳市达恩科技有限公司	NCE15TD60BF	NCEPOWER	24+	N/A	30	原装原装原装	询价
中天科工半导体（深圳）有限公司	NCE15P25JK	原装	25+	TO-252	20300	原装特价NCE15P25JK即刻询购立享优惠#长期有货	询价
深圳市星辰微电科技有限公司	NCE15GD135T	NCE新洁能	22+	TO-247	100000	新结能全线供应,支持终端生产	询价
富凯科技(深圳）有限公司	NCE1505S	NCE/新洁能	24+	SOP-8	5000	只做原装，欢迎询价，量大价优	询价
深圳市斌腾达科技有限公司	NCE15GD135T	NCE新洁能	21+	TO-247	25000	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市粤骏腾电子科技有限公司	NCE1260/TO-220	新洁能	24+	NA	58000	原装现货	询价
深圳市亿联芯电子科技有限公司	NCE15P25	NCE/新洁能	2023+	TO-220	6895	原厂全新正品旗舰店优势现货	询价
深圳市科恒伟业电子有限公司	NCE1520AK	NCE/新洁能	24+	TO-252	7850	只做原装正品现货或订货假一赔十!	询价
深圳市硅虎电子有限公司	NCE1505S	NCE	19+	SOP	480	进口原装公司现货	询价

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NCE1规格书下载地址

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NCE1数据表相关新闻

NCE15P25I
NCE15P25I
2021-8-11
NCE15P25JI
NCE15P25JI
2021-8-11
NCE01P30
NCE01P30
2021-8-11
NCE01P18L
NCE01P18L
2021-8-11
NCE01P18K
NCE01P18K
2021-8-11
NCE1421
NCE1421
2021-8-9

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NCE1产品属性

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NCE1芯片相关品牌

NCE1规格书下载地址

NCE1参数引脚图相关

NCE1数据表相关新闻

NCE15P25I

NCE15P25JI

NCE01P30

NCE01P18L

NCE01P18K

NCE1421

DdatasheetPDF页码索引