NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1102N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 110V,ID = 2A RDS(ON)

12-200V N-Channel Trench MOSFET

Specifications

Electrical Impedance 50 Ohms Frequency Range DC ~ 6 GHz Voltage Rating 335 Volts Peak Dielectic Withstanding Voltage 1000 Volts RMS Insertion Loss .20 dB Max. Mechanical Mating Snap-On Coupling Mating Torque 4.5 pounds (20N) Max. Engagement 2.3 pounds (10N) Min. Disengagement Cable Attach

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 32 (7/40) AWG Tinned Copper 0.009 b) Insulation 0.010 Wall, Nom. PVC 0.029 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 3 WHITE 2 RED 4 GREEN 2) Cable Assembly 4 Components Cabled a) Twi

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 32 (7/40) AWG Tinned Copper 0.009 b) Insulation 0.010 Wall, Nom. PVC 0.029 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 3 WHITE 2 RED 4 GREEN 2) Cable Assembly 4 Components Cabled a) Twi

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

PCMCIA MODEM TRANSFORMERS

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