General Description

Using NCE's proprietary high density trench gate design and advanced FS

(Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers

superior conduction and switching performances, and easy parallel operation;

Features

 Trench Field Stop Gen.7 Technology Offering

 Low saturation voltage: VCEsat = 1.60V(Typ.) @ IC = 120 A

 High speed switching, Low switching losses

 High ruggedness, temperature stable behavior

 Maximum junction temperature Tvjmax = 175°C

 Easy paralleling capability due to positive temperature coefficient in VCEsat

 Tighten parameter distribution

 Pb-free lead plating; RoHS compliant

Application

 PV power

 Three-level Solar String Inverter

 UPS