Description

The NCE1102N uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS = 110V,ID = 2A

RDS(ON) <250mΩ @ VGS=10V (Typ:218mΩ)

RDS(ON) <310mΩ @ VGS=10V (Typ:260mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply